RU30J30M دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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RU30J30M
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حجم فایل
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77.14
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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RoHS:
true
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Type:
2 N-Channel(Half Bridge)
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Shenzhen ruichips Semicon RU30J30M
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Operating Temperature:
+150°C@(Tj)
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Power Dissipation (Pd):
29W
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Total Gate Charge (Qg@Vgs):
12nC@10V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
670pF@15V
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Continuous Drain Current (Id):
30A
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Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
75pF@15V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
7mΩ@10V,20A
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Package:
PDFN-8(4.9x5.8)
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Manufacturer:
Shenzhen ruichips Semicon
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Part id:
1085484
